inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF610 features low r ds(on) v gs rated at 20v silicon gate for fast switching speed rugged low drive requirements descrition designed especially for high voltage,high speed applications, such as off-line switching power supplies , ups,ac and dc motor controls,relay and solenoid drivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 200 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 3.3 a i dm drain current-single plused 8 a p d total dissipation @t c =25 43 w t j max. operating junction temperature -55~175 t stg storage temperature -55~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.9 /w r th j-a thermal resistance,junction to ambient 80 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF610 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 200 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 1.6a 1.5 i gss gate-body leakage current v gs = 20v;v ds = 0 500 na i dss zero gate voltage drain current v ds = 200v; v gs =0 250 ua v sd forward on-voltage i s = 3.3a; v gs =0 2.0 v ciss input capacitance v ds =25v,v gs =0v, f=1.0mhz 200 pf coss output capacitance 80 pf crss reverse transfer capacitance 25 pf switching characteristics (t c =25 ) symbol parameter conditions min typ max unit td(on) turn-on delay time v dd =100v,i d =3.3a v gs =10v,r gen =24 r gs =24 8 12 ns tr rise time 17 26 ns td(off) turn-off delay time 13 21 ns tf fall time 9 13 ns pdf pdffactory pro www.fineprint.cn
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